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2SA1261-Z - Silicon PNP Power Transistor

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Description

High switching speed Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC3157 APPLICATIONS High speed high voltage switchi

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Datasheet Details

Part number 2SA1261-Z
Manufacturer Inchange Semiconductor
File Size 186.31 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION ·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.
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