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2SA1659 - POWER TRANSISTOR

General Description

High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) Complement to Type 2SC4370

board or bushing when mounting.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.