Datasheet Details
| Part number | 2SA1657 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.19 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1657-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1657 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.19 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1657-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage VCEO= -150V(Min) ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating board or bushing when mounting.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature -0.5 A 20 W 2 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1657 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
| Part Number | Description |
|---|---|
| 2SA1651 | POWER TRANSISTOR |
| 2SA1658 | POWER TRANSISTOR |
| 2SA1659 | POWER TRANSISTOR |
| 2SA1659A | POWER TRANSISTOR |
| 2SA1600 | POWER TRANSISTOR |
| 2SA1601 | POWER TRANSISTOR |
| 2SA1606 | Silicon PNP Power Transistor |
| 2SA1615 | Silicon PNP Power Transistor |
| 2SA1615-Z | Silicon PNP Power Transistor |
| 2SA1633 | POWER TRANSISTOR |