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2SA1657 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage VCEO= -150V(Min) Complement to Type 2SC4368

board or bushing when mounting.

Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage VCEO= -150V(Min) ·Complement to Type 2SC4368 ·Full-mold package that does not require an insulating board or bushing when mounting. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV, monitor vertical output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃ TJ Junction Temperature -0.