Datasheet Details
| Part number | 2SA1659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.49 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1659_InchangeSemiconductor.pdf |
|
|
Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659.
| Part number | 2SA1659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.49 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1659_InchangeSemiconductor.pdf |
|
|
|
·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
| Part Number | Description |
|---|---|
| 2SA1659A | POWER TRANSISTOR |
| 2SA1651 | POWER TRANSISTOR |
| 2SA1657 | Silicon PNP Power Transistor |
| 2SA1658 | POWER TRANSISTOR |
| 2SA1600 | POWER TRANSISTOR |
| 2SA1601 | POWER TRANSISTOR |
| 2SA1606 | Silicon PNP Power Transistor |
| 2SA1615 | Silicon PNP Power Transistor |
| 2SA1615-Z | Silicon PNP Power Transistor |
| 2SA1633 | POWER TRANSISTOR |