2SA1659 Overview
·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·plement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1659 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat)...