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2SA2222SG Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Large current capacitance ·High-speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -13 A 25 W 2 150 ℃ -55~150 ℃ 2SA2222SG isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA2222SG ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -6A;

IB= -300mA VBE(sat) Base-Emitter Saturation Voltage IC= -6A;

IB= -300mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;

Overview

isc Silicon PNP Power Transistor.