2SA963 Datasheet | Inchange Semiconductor

DESCRIPTION - With TO-126 package - plement to type 2SC2209 - High collector power dissipation APPLICATIONS - For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION - Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -1.5 -3 10 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-2m A;IB=0 -40 V(BR)CBO VCEsat Collector-base breakdown voltage IC=-1m A ;IE=0 IC=-1.5A ;IB=-150m A -50 Collector-emitter saturation voltage -1.0 VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V μA μA μA ICBO Collector cut-off current VCB=-20V; IE=0 -1 ICEO Collector cut-off current VCE=-10V;...