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2SB1089 Datasheet

Silicon PNP Power Transistors

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1089
DESCRIPTION
·High Collector Current:: IC= -3A
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
·Complement to Type 2SD1567
APPLICATIONS
·Designed for power supplies or a variety of drives in audio
and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-5 A
IB Base Current-Continuous
Total Power Dissipation
@ Ta=25
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
-0.6 A
1.3
W
30
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SB1089 Datasheet Preview

2SB1089 Datasheet

Silicon PNP Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1089
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO Collector Cutoff Current
VCB= -60V; IE= 0
IEBO Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -50mA; VCE= -5V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -5V
COB Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V
MIN TYP. MAX UNIT
-1.5 V
-2.0 V
-10 μA
-10 μA
20
40 200
70 pF
20 MHz
hFE-2 Classifications
ML K
40-80 60-120 100-200
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SB1089
Description Silicon PNP Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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