Datasheet Details
| Part number | 2SC1827 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.71 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC1827 Download (PDF) |
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| Part number | 2SC1827 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.71 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC1827 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·Complement to Type 2SA769 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC1827 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC1827 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
isc Silicon NPN Power Transistor.
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