Datasheet Details
| Part number | 2SC3252 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.18 KB |
| Description | Power Transistor |
| Download | 2SC3252 Download (PDF) |
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| Part number | 2SC3252 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.18 KB |
| Description | Power Transistor |
| Download | 2SC3252 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1288 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3252 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor.
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