Datasheet Details
| Part number | 2SC3412 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.33 KB |
| Description | Power Transistor |
| Download | 2SC3412 Download (PDF) |
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| Part number | 2SC3412 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.33 KB |
| Description | Power Transistor |
| Download | 2SC3412 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V (Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3412 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
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