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2SC3449 - Silicon NPN Power Transistor

Description

Low Collector Saturation Voltage High breakdown voltage and high reliability Fast switching speed Wide ASO NPN triple diffused planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3449 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage and high reliability ·Fast switching speed ·Wide ASO ·NPN triple diffused planar silicon transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -
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