Datasheet Details
| Part number | 2SC3475 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.76 KB |
| Description | Power Transistor |
| Download | 2SC3475 Download (PDF) |
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| Part number | 2SC3475 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.76 KB |
| Description | Power Transistor |
| Download | 2SC3475 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 20 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3475 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3475 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
isc Silicon NPN Power Transistor.
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