Datasheet Details
| Part number | 2SC3479 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.03 KB |
| Description | Power Transistor |
| Download | 2SC3479 Download (PDF) |
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| Part number | 2SC3479 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.03 KB |
| Description | Power Transistor |
| Download | 2SC3479 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3479 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
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