2SC3659 transistors equivalent, silicon npn power transistors.
*Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*High Breakdown Voltage-
: VCES= 1700V (Min)
*Built-in Damper Didoe
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high voltage, high power switching applications.
ABSOL.
Image gallery
TAGS
Download (Size : 188.10KB)