Datasheet Details
| Part number | 2SC3659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.10 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3659 Download (PDF) |
|
|
| Part number | 2SC3659 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.10 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3659 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3659 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3659 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SC3657 | Silicon NPN Power Transistors |
| 2SC3658 | Silicon NPN Power Transistors |
| 2SC3619 | Silicon NPN Power Transistors |
| 2SC3626 | Silicon NPN Power Transistors |
| 2SC3627 | Silicon NPN Power Transistors |
| 2SC3636 | Silicon NPN Power Transistors |
| 2SC3637 | Silicon NPN Power Transistors |
| 2SC3638 | Silicon NPN Power Transistors |
| 2SC3640 | Silicon NPN Power Transistor |
| 2SC3678 | Silicon NPN Power Transistors |