Datasheet Details
| Part number | 2SC3720 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.75 KB |
| Description | Power Transistor |
| Download | 2SC3720 Download (PDF) |
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| Part number | 2SC3720 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.75 KB |
| Description | Power Transistor |
| Download | 2SC3720 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 200 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ 2SC3720 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor.
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