Datasheet Details
| Part number | 2SC3968 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.15 KB |
| Description | Power Transistor |
| Download | 2SC3968 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor 2SC3968.
| Part number | 2SC3968 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.15 KB |
| Description | Power Transistor |
| Download | 2SC3968 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 20 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3968 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
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