Datasheet4U Logo Datasheet4U.com

2SD103 - Silicon NPN Power Transistors

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High Power Dissipation- : PC= 25W(Max)@TC=25℃ Complement to Type 2SB503 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier, power switchi

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1030 Silicon NPN Transistor Panasonic Semiconductor
2SD1031 NPN Transistor INCHANGE
2SD1032A Si NPN Transistor Panasonic Semiconductor
2SD1033 NPN Transistor NEC
2SD1033 Silicon NPN Transistor Kexin

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1032 Silicon NPN Power Transistor
2SD1044 Silicon NPN Darlington Power Transistor
2SD1071 Silicon NPN Transistor
2SD1113 Silicon NPN Power Transistor
2SD1117 Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Complement to Type 2SB503 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
Published: |