2SD103 Datasheet | Specifications & PDF Download

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)C

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1031 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)

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Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.8 –0.3 +0.2 s Features q q q q q 0.65±0.15 +0.25

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isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(M

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1038 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·100% avalanche tested ·M

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lo

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER) 2SD1034A HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS. MOTOR CONT

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SMD Type Silicon NPN Epitaxial Transistor 2SD1033 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 www.datasheet4u.com DESCRIPTION ·With MT-200 package ·Excellen

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complemen

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