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2SD1117

2SD1117 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
2SD1117 datasheet preview

2SD1117 Datasheet

Part number 2SD1117
Download 2SD1117 Datasheet (PDF)
File Size 208.53 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
2SD1117 page 2

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2SD1117 Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·plement to Type 2SB850 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers.

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