Datasheet4U Logo Datasheet4U.com

2SD1117 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

2SD1117 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A *Wide Area of Safe Operation *Complement to Type 2SB850 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT.

2SD1117 Datasheet (208.53 KB)

Preview of 2SD1117 PDF

Datasheet Details

Part number:

2SD1117

Manufacturer:

Inchange Semiconductor

File Size:

208.53 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

2SD111 Silicon NPN Power Transistor (INCHANGE)

2SD1110 NPN Transistor (INCHANGE)

2SD1110 SILICON POWER TRANSISTOR (SavantIC)

2SD1111 NPN TRANSISTOR (Sanyo Semicon Device)

2SD1113 Silicon NPN Power Transistor (Inchange Semiconductor)

2SD1113 NPN TRANSISTOR (Hitachi Semiconductor)

2SD1113 Silicon NPN Transistor (Renesas)

2SD1113K NPN TRANSISTOR (Hitachi Semiconductor)

2SD1113K Silicon NPN Transistor (Renesas)

2SD1114 NPN Transistor (INCHANGE)

TAGS

2SD1117 Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

2SD1117 Datasheet Preview Page 2

2SD1117 Distributor