2SD1118 transistor equivalent, silicon npn power transistor.
*Switching regulators
*DC-DC converter
*Solid sate relay
*General purpose power amplifiers
ABSOLUTE MAX.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*High DC Current Gain-
: hFE= 300V(Min.) @IC= 1A
*Low Collector Saturation Voltage
*High Reliability
*Minimum Lot-to-Lot variations for robust device
performance and relia.
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