| Part number | 2SD1118 |
|---|---|
| Download | 2SD1118 Datasheet (PDF) |
| File Size | 209.13 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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| Part Number | Description |
|---|---|
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : MAX UNIT 2.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1118 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
