Datasheet Details
| Part number | 2SD1248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.03 KB |
| Description | Power Transistor |
| Download | 2SD1248 Download (PDF) |
|
|
| Part number | 2SD1248 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.03 KB |
| Description | Power Transistor |
| Download | 2SD1248 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
RBE= ∞ V(BR)EBO Emitter -Base Breakdown Voltage IE= 5mA;
isc Silicon NPN Darlington Power Transistor 2SD1248.
| Part Number | Description |
|---|---|
| 2SD1245 | Silicon NPN Power Transistor |
| 2SD1233 | Power Transistor |
| 2SD1269 | Silicon NPN Transistor |
| 2SD1298 | Silicon NPN Transistor |
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |