Datasheet Details
| Part number | 2SD1440 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.15 KB |
| Description | Power Transistor |
| Download | 2SD1440 Download (PDF) |
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| Part number | 2SD1440 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.15 KB |
| Description | Power Transistor |
| Download | 2SD1440 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Peak 13 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.5 A 2.5 W 65 130 ℃ Tstg Storage Temperature Range -55~130 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1440 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
isc Silicon NPN Power Transistor 2SD1440.
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