Datasheet Details
| Part number | 2SD1500 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.26 KB |
| Description | Power Transistor |
| Download | 2SD1500 Download (PDF) |
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| Part number | 2SD1500 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.26 KB |
| Description | Power Transistor |
| Download | 2SD1500 Download (PDF) |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1500 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Darlington Power Transistor 2SD1500.
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