Datasheet Details
| Part number | 2SD1518 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.58 KB |
| Description | Power Transistor |
| Download | 2SD1518 Download (PDF) |
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| Part number | 2SD1518 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.58 KB |
| Description | Power Transistor |
| Download | 2SD1518 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1518 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A;
isc Silicon NPN Power Transistor.
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