Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 2A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
- Good Linearity of hFE
- High Speed Switching
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier,power switching...