Datasheet Details
| Part number | 2SD1543 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.75 KB |
| Description | Power Transistor |
| Download | 2SD1543 Download (PDF) |
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| Part number | 2SD1543 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.75 KB |
| Description | Power Transistor |
| Download | 2SD1543 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1543 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A;
IB= 0.6A ICBO Collector Cutoff Current VCB= 500V;
isc Silicon NPN Power Transistor.
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