Datasheet Details
| Part number | 2SD1601 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.87 KB |
| Description | Power Transistor |
| Download | 2SD1601 Download (PDF) |
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| Part number | 2SD1601 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.87 KB |
| Description | Power Transistor |
| Download | 2SD1601 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
isc Silicon NPN Darlington Power Transistor 2SD1601.
| Part Number | Description |
|---|---|
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| 2SD1604 | Power Transistor |
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| 2SD1608 | Power Transistor |
| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |
| 2SD1656 | Power Transistor |
| 2SD1662 | Silicon NPN Power Transistor |