Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min)
High DC Current Gain
: hFE= 1000(Min) @IC= 4A
High Speed Switching
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for medium speed power switching applicati
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isc Silicon NPN Darlington Power Transistor
2SD1608
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
2 W
50
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SD1608 Datasheet
