| Part number | 2SD1601 |
|---|---|
| Datasheet | 2SD1601_InchangeSemiconductor.pdf |
| File Size | 210.87 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·plement to Type 2SB1101 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
| 2SD1608 | Power Transistor |
| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |
| 2SD1656 | Power Transistor |
| 2SD1662 | Silicon NPN Power Transistor |
