Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
High DC Current Gain
: hFE= 1000(Min) @IC= 1.5A
Complement to Type 2SB1105
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifiers a
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 1.5A ·Complement to Type 2SB1105 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICP
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1605
isc website：www.iscsemi.
2SD1605 Datasheet
