Datasheet Details
| Part number | 2SD1605 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.28 KB |
| Description | Power Transistor |
| Download | 2SD1605 Download (PDF) |
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| Part number | 2SD1605 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.28 KB |
| Description | Power Transistor |
| Download | 2SD1605 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1.5A ·Complement to Type 2SB1105 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1605 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
isc Silicon NPN Darlington Power Transistor.
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|---|---|
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