Datasheet Details
| Part number | 2SD1608 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.79 KB |
| Description | Power Transistor |
| Download | 2SD1608 Download (PDF) |
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| Part number | 2SD1608 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.79 KB |
| Description | Power Transistor |
| Download | 2SD1608 Download (PDF) |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 2 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
L= 10mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Darlington Power Transistor 2SD1608.
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