2SD1670 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage-.
2SD1670 is Power Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| 2SD1601 | Power Transistor |
| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage-.