Datasheet Details
| Part number | 2SD1756 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.23 KB |
| Description | Power Transistor |
| Download | 2SD1756 Download (PDF) |
|
|
| Part number | 2SD1756 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.23 KB |
| Description | Power Transistor |
| Download | 2SD1756 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 5A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage high current amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1756 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A;
L= 5mH V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
isc Silicon NPN Darlington Power Transistor.
| Part Number | Description |
|---|---|
| 2SD1758 | Silicon NPN Power Transistor |
| 2SD1706 | Silicon NPN Power Transistor |
| 2SD1709 | Silicon NPN Power Transistor |
| 2SD1711 | Silicon NPN Power Transistors |
| 2SD1713 | Power Transistor |
| 2SD1714 | Power Transistor |
| 2SD1716 | Power Transistor |
| 2SD1720 | Power Transistor |
| 2SD1727 | Power Transistor |
| 2SD1728 | Power Transistor |