Datasheet Details
| Part number | 2SD1850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.14 KB |
| Description | Power Transistor |
| Download | 2SD1850 Download (PDF) |
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|
| Part number | 2SD1850 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.14 KB |
| Description | Power Transistor |
| Download | 2SD1850 Download (PDF) |
|
|
|
·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 3 W 120 150 ℃ Tstg Storage Temperature Range -55-150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
isc Silicon NPN Power Transistor 2SD1850.
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