| Part number | 2SD1801 |
|---|---|
| Datasheet | 2SD1801-InchangeSemiconductor.pdf |
| File Size | 228.67 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1801 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 50mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1801 | Bipolar Transistor | ON Semiconductor |
 |
2SD1801 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD180 | Silicon NPN Power Transistor |
| 2SD1802 | Silicon NPN Power Transistor |
| 2SD1803 | TO-126 Silicon NPN Power Transistor |
| 2SD1805 | Silicon NPN Power Transistor |
| 2SD1816 | Silicon NPN Power Transistor |
| 2SD1841 | Silicon NPN Power Transistor |
| 2SD1850 | Power Transistor |
| 2SD1857 | Silicon NPN Power Transistor |
| 2SD1896 | Silicon NPN Power Transistor |
| 2SD1899 | Silicon NPN Power Transistor |
