Datasheet Details
| Part number | 2SD2027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.36 KB |
| Description | Power Transistor |
| Download | 2SD2027 Download (PDF) |
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| Part number | 2SD2027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.36 KB |
| Description | Power Transistor |
| Download | 2SD2027 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1.75 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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