Datasheet Details
| Part number | 2SK350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.65 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK350 Download (PDF) |
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| Part number | 2SK350 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 234.65 KB |
| Description | N-Channel MOSFET Transistor |
| Download | 2SK350 Download (PDF) |
|
|
|
·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V;
isc N-Channel MOSFET Transistor 2SK350.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK350 | Silicon N-Channel MOSFET | Hitachi |
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2SK3501-01 | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
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2SK3502-01MR | N CHANNEL SILICON POWER MOSET | Fuji Electric |
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2SK3503 | N-Channel MOSFET | Kexin |
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2SK3503 | N-Channel MOSFET | NEC |
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