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Inchange Semiconductor

30N06 Datasheet Preview

30N06 Datasheet

N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤0.05
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
100
PD
Total Dissipation @TC=25
105
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
1.19
UNIT
/W
30N06
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange Semiconductor

30N06 Datasheet Preview

30N06 Datasheet

N-Channel MOSFET Transistor

No Preview Available !

isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=15A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VDS= 60V; VGS= 0V
VSD
Diode forward voltage
Is=30A; VGS = 0V
30N06
MIN TYP MAX UNIT
60
V
2
4
V
0.05
Ω
±100 nA
200 μA
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number 30N06
Description N-Channel MOSFET Transistor
Maker Inchange Semiconductor
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30N06 Datasheet PDF





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