3DD102
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
- DC Current Gain-
: h FE= 20(Min.)@IC= 2A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
- Designed for power amplifier , DC Transform T-Shirt
- SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 2.0 ℃/W isc website： .iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD102
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARA...
