3DD102C Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
3DD102C is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| Shaanxi Qunli Electric Shaanxi Qunli Electric |
3DD102 | NPN Silicon Low Frequency High Power Transistor |
Inchange Semiconductor |
3DD102D | NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.