3DD102C Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Part number | 3DD102C |
|---|---|
| Datasheet | 3DD102C-InchangeSemiconductor.pdf |
| File Size | 209.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| Shaanxi Qunli Electric | 3DD102 | NPN Silicon Low Frequency High Power Transistor | Shaanxi Qunli Electric |
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3DD102D | NPN Transistor | INCHANGE |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DD102 | Silicon NPN Power Transistor |
| 3DD102A | Silicon NPN Power Transistor |
| 3DD102B | Silicon NPN Power Transistor |
| 3DD101A | Silicon NPN Power Transistor |
| 3DD101B | Silicon NPN Power Transistor |
| 3DD15 | Silicon NPN Power Transistor |
| 3DD155 | Silicon NPN Power Transistor |
| 3DD15A | Silicon NPN Power Transistor |
| 3DD15B | Silicon NPN Power Transistor |
| 3DD15C | Silicon NPN Power Transistor |