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3DD102C Datasheet Preview

3DD102C Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·DC Current Gain-
: hFE= 20(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier , DC Transform T-Shirt
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=75
50
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 /W
3DD102C
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

3DD102C Datasheet Preview

3DD102C Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 50V; IB=0
ICBO
Collector Cutoff Current
VCB= 50V; IE=0
hFE
DC Current Gain
IC= 2A; VCE= 5V
fT
Bandwidth Product
IC=0.5A ; VCE= 10V
3DD102C
MIN MAX UNIT
200
V
250
V
5
V
1.5
V
2.0 mA
1.0 mA
20
1
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 3DD102C
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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3DD102C Datasheet PDF






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