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5N50 Inchange Semiconductor TO-220F N-Channel MOSFET

Description ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drai...
Features GS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 5N50 MIN TYPE MAX UNIT 500 V 2.0 4.0 V 1.0 V 1.6 Ω ±100 nA 10 µA NOTICE: IS...

Datasheet PDF File 5N50 Datasheet - 230.38KB

5N50  






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