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Inchange Semiconductor

8N65 Datasheet Preview

8N65 Datasheet

N-Channel Mosfet Transistor

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isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
8N65
·FEATURES
·Drain Current –ID= 8A@ TC=25
·Drain Source Voltage- : VDSS= 650V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High efficiency switch mode power supply
·PWM motor controls
·High efficient DC to DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
32
A
PD
Total Dissipation @TC=25
147
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.85 /W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

8N65 Datasheet Preview

8N65 Datasheet

N-Channel Mosfet Transistor

No Preview Available !

isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
8N65
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 4A
IGSS
Gate-Body Leakage Current
VGS= ±30V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0
VSD
Forward On-Voltage
IS= 8A; VGS= 0
MIN MAX UNIT
650
V
2
4
V
1.4
Ω
±100 nA
10
μA
1.4
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 8N65
Description N-Channel Mosfet Transistor
Maker Inchange Semiconductor
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8N65 Datasheet PDF






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