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8N65-ML - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=4.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain Power MOSFET 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO-252 1 TO-262 1 TO-263 1.Gate 3.Source.

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Datasheet preview – 8N65-ML

Datasheet Details

Part number 8N65-ML
Manufacturer UTC
File Size 428.27 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 8N65-ML Datasheet
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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 8N65-ML 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 1.2 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain Power MOSFET 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO-252 1 TO-262 1 TO-263 1.Gate 3.
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