8N60-MH Description
The UTC 8N60-MH is a high voltage power MOSFET bines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. TO-220F TO-220F1 1 TO-220F2.
8N60-MH Key Features
- RDS(ON) ≤ 1.15 Ω @ VGS=10V, ID=4.0A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING