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8N60-MH - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 8N60-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 1.15 Ω @ VGS=10V, ID=4.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 1 TO-251 1 TO-252.

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Datasheet preview – 8N60-MH

Datasheet Details

Part number 8N60-MH
Manufacturer UTC
File Size 219.00 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 8N60-MH Datasheet
Additional preview pages of the 8N60-MH datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 8N60-MH Preliminary 8.0A, 600V N-CHANNEL POWER MOSFET 1 Power MOSFET 1  DESCRIPTION The UTC 8N60-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. TO-220F TO-220F1 1 TO-220F2  FEATURES * RDS(ON) ≤ 1.15 Ω @ VGS=10V, ID=4.
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