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8N60-E - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) < 1.4Ω@VGS = 10 V.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Datasheet Details

Part number 8N60-E
Manufacturer Unisonic Technologies
File Size 194.15 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 8N60-E Datasheet
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UNISONIC TECHNOLOGIES CO., LTD 8N60-E Preliminary 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 1.
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