8N60-E Datasheet | Unisonic Technologies

UNISONIC TECHNOLOGIES CO., LTD Preliminary 8A, 600V N-CHANNEL POWER MOSFET - DESCRIPTION The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. - Features - RDS(ON) < 1.4Ω@VGS = 10 V - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness - SYMBOL Power MOSFET - ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 8N60L-TF1-T 8N60G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube - MARKING .unisonic..tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A86.b Preliminary Power MOSFET -...