8N60K-MT - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) < 1.2Ω @ VGS = 10V, ID = 4.0A.
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL Power MOSFET.

Unisonic Technologies

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Datasheet Details

Part number	8N60K-MT
Manufacturer	Unisonic Technologies
File Size	200.48 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	8N60K-MT Datasheet
Additional preview pages of the 8N60K-MT datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 1.2Ω @ VGS = 10V, ID = 4.

Published: Feb 7, 2016 |