8N60K-MT
Description
The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Key Features
- RDS(ON) < 1.2Ω @ VGS = 10V, ID = 4.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
