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8N60-CBQ - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC 8N60-CBQ is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=4.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness 1 TO-220 1 11 TO-220F1.
  • SYMBOL TO-220F TO-220F2.

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Datasheet preview – 8N60-CBQ

Datasheet Details

Part number 8N60-CBQ
Manufacturer UTC
File Size 224.76 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 8N60-CBQ Datasheet
Additional preview pages of the 8N60-CBQ datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 8N60-CBQ Preliminary 8A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 8N60-CBQ is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=4.
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