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8N65K-MTQ - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=4.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 11 1 TO-220F2 TO-220F3 TO-251 1 TO-252 11 TO-251S TO-262 1 TO-263 2.Drain 1.Gate 3.Source www. unisonic. com. tw Copyright © 2020 Unisonic Technologies Co. , Ltd 1 of 9 QW-R209-054.G 8N65K-MTQ Power MOSFET.

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Datasheet Details

Part number 8N65K-MTQ
Manufacturer UTC
File Size 577.71 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 8N65K-MTQ Datasheet
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UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 11 1 TO-220F2 TO-220F3 TO-251 1 TO-252 11 TO-251S TO-262 1 TO-263 2.Drain 1.Gate 3.Source www.unisonic.com.
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