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8N65K-MTQ - N-CHANNEL MOSFET

General Description

The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=4.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 11 1 TO-220F2 TO-220F3 TO-251 1 TO-252 11 TO-251S TO-262 1 TO-263 2.Drain 1.Gate 3.Source www. unisonic. com. tw Copyright © 2020 Unisonic Technologies Co. , Ltd 1 of 9 QW-R209-054.G 8N65K-MTQ Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 11 1 TO-220F2 TO-220F3 TO-251 1 TO-252 11 TO-251S TO-262 1 TO-263 2.Drain 1.Gate 3.Source www.unisonic.com.