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BDY71X Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
BDY71X
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation-
: PC= 29W @TC= 25
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for accordance with the requirements
of BS, CECC and JAN,JANTX, JANTXV and
JANS specifications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
90
V
VCEX
Collector-Emitter Voltage VBE= -1.5V
90
V
VCER
Collector-Emitter Voltage RBE= 100Ω
60
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25
29
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
6.0
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BDY71X Datasheet Preview

BDY71X Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 4V
ICEO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 30V; IB= 0
VCE= 90V; VBE(off)= 1.5V
VCE= 30V; VBE(off)= 1.5V,TC=150
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 0.5A ; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.2A; VCE= 10V
BDY71X
MIN MAX UNIT
55
V
7
V
1.0
V
1.7
V
0.5
mA
1.0
5.0
mA
1.0
mA
80
250
0.8
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BDY71X
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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